nucleation density meaning in Chinese
成核密度
Examples
- The three different pretreatment methods were adopted respectively in order to increase nucleation density
为提高金刚石成核密度分别采用以下三种不同的基片处理方法。 - Hence , it is considered that the high nucleation density integrated with low substrate temperatures causes the growth of nanocrystalline p - sic films effectively
因此，高的形核密度与低的衬底温度是促进纳米- sic薄膜生长的关键因素。 - When the third pretreatment method was adopted , microwave input power was 700w , gas pressure was 1000pa and substrate was tangent on plasma ball surface , diamond films showed higher nucleation density by contrast
经过对比采用方案基片处理方式，基片和等离子球处于相切位置时，在微波输入功率700w和反应气压1000pa时沉积工艺参数时，基片成核密度较高。 - By increasing the h2 dilution ratio , it is found that atomic hydrogen can selectively etch amorphous phase and stabilize crystalline phase . from the study on the distance from substrate to catalyzer , choosing a proper distance can ensure the gas fully decomposed , while a relatively low substrate temperature can cause the nanocrystalline particles to lose mobility and keep their sizes . the pre - carbonization process can enhance the nucleation density and make the growth of high quality nanocrystalline p - sic films much easier
实验结果表明：随着工作气压的减小，薄膜的晶粒尺寸有所减小；通过提高氢气稀释度，利用原子氢在成膜过程中起的刻蚀作用，可以稳定结晶相并去除杂相；选择适当的热丝距离能保证反应气体充分分解，又使衬底具有较高的过冷度，是形成纳米薄膜的重要条件；采用分步碳化法可以提高形核密度，有利于获得高质量的纳米- sic薄膜；衬底施加负偏压可以明显提高衬底表面的基团的活性，因负偏压产生的离子轰击还能造成高的表面缺陷密度，形成更多的形核位置。